Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

Author:

Samanta Piyas1,Mandal Krishna C.1

Affiliation:

1. Univ. of South Carolina (United States)

Publisher

SPIE

Reference37 articles.

1. Silicon carbide high-power devices

2. High-temperature electronics-a role for wide bandgap semiconductors?;Neudeck,2002

3. Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide

4. Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles

5. Kimoto, T. and Cooper, J. A., [Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications], John Wiley, Singapore (2014).

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