Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC-Reference-Cited by-同舟云学术

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Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

Published:2016-09-09 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Samanta Piyas¹,Mandal Krishna C.¹

Affiliation:

1. Univ. of South Carolina (United States)

Publisher

SPIE

Reference37 articles.

1. Silicon carbide high-power devices

2. High-temperature electronics-a role for wide bandgap semiconductors?;Neudeck,2002

3. Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide

4. Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles

5. Kimoto, T. and Cooper, J. A., [Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications], John Wiley, Singapore (2014).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis;Journal of Semiconductors;2017-10

2. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures;Journal of Applied Physics;2017-09-07

3. Current conduction mechanisms through thin tunnel oxide during erase operation of flash electrically erasable programmable read-only memory devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05

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