Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide-Reference-Cited by-同舟云学术

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Thermally stimulated current and high temperature resistivity measurements of 4H semi-insulating silicon carbide

Published:2011-04 Issue:7 Volume:151 Page:532-535
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Mandal Krishna C.,Muzykov Peter G.,Krishna Ramesh,Hayes Timothy,Sudarshan Tangali S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference11 articles.

1. High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors

2. Fermi level control and deep levels in semi-insulating 4H–SiC

3. High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

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1. Effect of Enhanced Hole Transport on the Performance of Ni/Y₂O₃/n-4H-SiC Epilayer Radiation Detectors;IEEE Transactions on Nuclear Science;2023-09

2. Investigation of Ni/Y2O3/n-4H-SiC metal-oxide-semiconductor structure for high-resolution radiation detection;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV;2022-10-04

3. Role of Fermi-level depinning in quenching of V⁴⁺ related photoluminescence in semi-insulating 4H-SiC;Semiconductor Science and Technology;2022-08-18

4. Diameter Dependent Ultrasonic Investigation of SiC Nanowires;Advances in Computer and Electrical Engineering;2021

5. Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices;Micromachines;2020-02-28

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