Leakage current conduction, hole injection, and time-dependent dielectric breakdown ofn-4H-SiC MOS capacitors during positive bias temperature stress
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973674
Reference65 articles.
1. Fundamentals of Silicon Carbide Technology
2. Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications
3. Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect
4. Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices
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3. Gate Leakage Current Analysis using Bayesian Deconvolution for Accurate Electron/Hole Trapping Characterizations in 4H-SiC MOSFETs;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03
4. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-01
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