Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Author:

Spry David J.,Neudeck Philip G.,Chen Liangyu,Lukco Dorothy,Chang Carl W.,Beheim Glenn M.

Funder

National Aeronautics and Space Administration in part through the Transformative Tools and Technologies Project

Planetary Instrument Concepts for the Advancement of Solar System Observations Programs

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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2. Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes;Advanced Electronic Materials;2024-03-27

3. Characteristics of SiC Power Diodes at Extreme Temperatures;2023 IEEE 14th International Symposium on Power Electronics for Distributed Generation Systems (PEDG);2023-06-09

4. High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures;IEEE Transactions on Instrumentation and Measurement;2023

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