Characteristics of SiC Power Diodes at Extreme Temperatures
Author:
Affiliation:
1. Xi’an Jiaotong University,College of Artificial Intelligence,Xi’an,China
2. State Grid Shanghai Electric Power Research Institute,Shanghai,China
Funder
State Grid Corporation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10215093/10215083/10215245.pdf?arnumber=10215245
Reference11 articles.
1. Improved Modeling of Medium Voltage SiC MOSFET Within Wide Temperature Range
2. A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations
3. 4H-SiC PIN Diode as High Temperature Multifunction Sensor
4. A Non-Segmented PSpice Model of SiC mosfet With Temperature-Dependent Parameters
5. Development of a new package for next generation power semiconductor devices: Toward high temperature and high voltage applications
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