High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures
Author:
Affiliation:
1. Chair of Physics of Electrotechnology, Technical University of Munich, Munich, Germany
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/19/10012124/10251538.pdf?arnumber=10251538
Reference27 articles.
1. 4H-SiC: a material for high temperature Hall sensor
2. High sensitivity and quantitative magnetic field measurements at 600°C
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4. High temperature Hall‐effect apparatus
5. A Perspective on Magnetic Field Sensors Operating Under Extreme High-Temperature Conditions
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1. Very High Temperature Hall Sensors in a Wafer‐Scale 4H‐SiC Technology;Advanced Materials Technologies;2024-08-07
2. 4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C;Applied Physics Letters;2024-05-06
3. Study on 4H-SiC Trench Schottky-Type Neutron Detector;IEEE Transactions on Instrumentation and Measurement;2024
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