4H–SiC vertical magnetotransistor with microtesla detectivity up to 500 °C

Abstract

In this Letter, we demonstrate the operation of an in-plane magnetic field sensitive 4H–SiC vertical magnetotransistor over a wide range of temperatures, ranging from room temperature up to 500 °C. The sensor is realized using the ion-implanted wells of a wafer-scale 4H–SiC Bipolar-CMOS-DMOS technology. We measure and analyze the sensor's DC characteristics, magnetic sensitivity, linearity, and noise performance and determine the achievable magnetic detectivity, which lies in the low μT/Hz regime up to 500 °C. Furthermore, we elaborate on the origin of the observed magnetic sensitivity using TCAD simulations.