Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1697616
Reference34 articles.
1. Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
2. Current instabilities in GaN-based devices
3. Fabrication and performance of GaN electronic devices
4. Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy
5. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
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