Low-temperature formation of CoSi2 in the presence of Au
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1691180
Reference24 articles.
1. Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation
2. Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition
3. Film thickness effects in the Co–Si1−xGex solid phase reaction
4. Interface stability of Ti(SiGe)2and SiGe alloys: Tie lines in the ternary equilibrium diagram
5. CoSi2 nucleation in the presence of Ge
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1. The feasibility of an ultrathin dual-barrier scheme to inhibit interfacial diffusion and reactions in contact stacks of Co/NiSi/Si;Surfaces and Interfaces;2024-08
2. Effect of a Ti diffusion barrier on the cobalt silicide formation: solid solution, segregation and reactive diffusion;Acta Materialia;2021-02
3. Long-range chemical interactions in solid-state reactions: effect of an inert Ag interlayer on the formation of L10-FePd in epitaxial Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1) trilayers;Philosophical Magazine;2014-06-11
4. Effect of high temperature deposition on CoSi2 phase formation;Journal of Applied Physics;2013-06-21
5. Au-assisted Co silicide island growth on Si(111);Applied Surface Science;2012-10
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