The feasibility of an ultrathin dual-barrier scheme to inhibit interfacial diffusion and reactions in contact stacks of Co/NiSi/Si-Reference-Cited by-同舟云学术

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The feasibility of an ultrathin dual-barrier scheme to inhibit interfacial diffusion and reactions in contact stacks of Co/NiSi/Si

Published:2024-08 Issue: Volume:51 Page:104703
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Hsiao Chien-Nan,Pan Yen-Chang^ORCID,Chen Wei-Chun,Cheng Yi-Lung,Fang Jau-Shiung^ORCID,Su Ting-Hsun^ORCID,Lin Meng-Jie^ORCID,Chen Giin-Shan^ORCID

Publisher

Elsevier BV

Reference60 articles.

1. Interconnects for nanoscale MOSFET technology: a review;Chaudhry;J. Semicond.,2013

2. RC benefits of advanced metallization options;Ciofi;IEEE Trans. Electron Dev.,2019

3. Highly conductive metal gate fill integration solution for extremely scaled RMG stack for 5 nm & beyond;Yoshida,2017

4. On-chip interconnect conductor materials for end-of-roadmap technology nodes;Vyas;IEEE Trans. Nnanotechnol.,2018

5. All-wet fabrication process for ULSI interconnect technologies;Yoshino;Electrochim. Acta,2005

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