Double two‐dimensional electron gas structure formed by molecular beam epitaxy regrowth on anex situpatternedn+‐GaAs back gate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112824
Reference11 articles.
1. Resonant tunneling between parallel, two‐dimensional electron gases: A new approach to device fabrication usingin situion beam lithography and molecular beam epitaxy growth
2. Back‐gated split‐gate transistor: A one‐dimensional ballistic channel with variable Fermi energy
3. Transport properties of closely separated two‐dimensional electron gases in a channel‐doped back gated high electron mobility transistor
4. The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer
5. Effect of the proximity of an ex situ patterned interface on the quality of two-dimensional electron gases at GaAs/AlGaAs heterojunctions
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Indium-bond-and-stop-etch (IBASE) technique for dual-side processing of thin high-mobility GaAs/AlGaAs epitaxial layers;Applied Physics Letters;2023-06-05
2. Highly reproducible fabrication of back-gated GaAs∕AlGaAs heterostructures using AuGeNi ohmic contacts with initial Ni layer;Applied Physics Letters;2008-04-14
3. Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures;Superlattices and Microstructures;1996-12
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