Transport properties of closely separated two‐dimensional electron gases in a channel‐doped back gated high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106715
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1. Velocity-Modulation Transistor (VMT) -- A New Field-Effect Transistor Concept
2. Parallel conduction in GaAs/AlxGa1-xAs modulation doped heterojunctions
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5. Transport properties of a gated, double quantum well HEMT
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1. Velocity-Modulation Transistor;Complete Guide to Semiconductor Devices;2010-11-03
2. Single-gated mobility modulation transistor;Semiconductor Science and Technology;1999-01-01
3. Lateral transport in a structure with two tunnelling-coupled quantum wells in a transverse electric field;Semiconductor Science and Technology;1997-04-01
4. Double two‐dimensional electron gas structure formed by molecular beam epitaxy regrowth on anex situpatternedn+‐GaAs back gate;Applied Physics Letters;1994-10-10
5. Resonant resistance enhancement in double-quantum-well GaAs-AlxGa1−xAs heterostructures;Physical Review B;1994-09-15
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