Resonant tunneling between parallel, two‐dimensional electron gases: A new approach to device fabrication usingin situion beam lithography and molecular beam epitaxy growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111768
Reference6 articles.
1. Tunneling spectroscopy in barrier-separated two-dimensional electron-gas systems
2. Independently contacted two‐dimensional electron systems in double quantum wells
3. Field‐induced resonant tunneling between parallel two‐dimensional electron systems
4. The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer
5. Novel Interference Effects between Parallel Quantum Wells
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3. Review Article: Tunneling-based graphene electronics: Methods and examples;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-09
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