Carbon implantation in InGaAs and AlInAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102531
Reference11 articles.
1. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy
2. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
3. Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy
4. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament
5. The electrical characteristics of InP implanted with the column IV elements
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2. Compound Semiconductor Device Processing;Materials Science and Technology;2013-02-15
3. Properties of epitaxial (Al x Ga1 − x As)1 − y C y alloys grown by MOCVD autoepitaxy;Semiconductors;2013-01
4. Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors;Journal of Crystal Growth;2007-04
5. Study of P-type carbon doping on In 0.53 Ga 0.47 As, In 0.52 Al 0.2 Ga 0.28 As, and In 0.52 Al 0.48 As;Applications of Photonic Technology 6;2003-12-12
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