The electrical characteristics of InP implanted with the column IV elements
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Ion‐implantedn‐ andp‐type layers in InP
2. N-type doping of indium phosphide by implantation
3. Gallium Arsenide and Related Compounds;Devlin,1979
4. Beryllium‐ion implantation in InP and In1−xGaxAsyP1−y
5. Implantation and PH 3 Ambient Annealing of InP
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1. (Invited) A Brief Review of Doping Issues in III-V Semiconductors;ECS Transactions;2013-05-03
2. Residual Shallow Donor- and Acceptor-Impurities in SSD- and LEC-Grown High-Purity InP Crystals;Defect and Diffusion Forum;2001-11
3. Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p(+)n InP junctions;Journal of Materials Science: Materials in Electronics;1999
4. Direct observation of the amphoteric behavior of Ge in InP modified by P co-implantation;Applied Physics Letters;1997-08-18
5. Amphoteric behavior and precipitation of Ge dopants in InP;Journal of Applied Physics;1996-11
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