Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
Author:
Affiliation:
1. IMEC, Kapeldreef 75, 3001 Leuven, Belgium
2. Department of Materials Engineering, KU Leuven, 3001 Leuven, Belgium
3. Department of Solid State Sciences, Ghent University, 9000 Gent, Belgium
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5046827
Reference51 articles.
1. Low Threading Dislocation Density GaAs on Si(100) with InGaAs/GaAs Strained-Layer Superlattice Grown by Migration-Enhanced Epitaxy
2. Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique
3. Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors
4. Bandlike and localized states at extended defects in silicon
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