Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique-Reference-Cited by-同舟云学术

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Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Published:2013-07-21 Issue:3 Volume:114 Page:033708
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Merckling C.,Waldron N.,Jiang S.,Guo W.,Richard O.,Douhard B.,Moussa A.,Vanhaeren D.,Bender H.,Collaert N.,Heyns M.,Thean A.,Caymax M.,Vandervorst W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4815959

Reference25 articles.

1. Ge and III/V as Enabling Materials for Future CMOS Technologies

2. Advanced Gate Stacks for High-Mobility Semiconductors

3. Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique

4. Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces

5. Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

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1. Strain Modulation of Selectively and/or Globally Grown Ge Layers;Nanomaterials;2021-05-28

2. Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD;Nanomaterials;2021-04-06

3. Atomic level deposition to extend Moore’s law and beyond;International Journal of Extreme Manufacturing;2020-04-30

4. GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity;Journal of Crystal Growth;2019-08

5. Observation of the Stacking Faults in In 0.53 Ga 0.47 As by Electron Channeling Contrast Imaging;physica status solidi (a);2019-07-19

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