Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy-Reference-Cited by-同舟云学术

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Published:2021-07-29 Issue:23 Volume:218 Page:2100227
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hsu Po-Chun¹²^ORCID,Simoen Eddy¹³,Liang Hu¹,De Jaeger Brice¹,Bakeroot Benoit¹⁴,Wellekens Dirk¹,Decoutere Stefaan¹

Affiliation:

1. IMEC Kapeldreef 75 Leuven 3001 Belgium

2. Department of Materials Engineering KU Leuven Leuven 3001 Belgium

3. Department of Solid State Sciences Ghent University Gent 9000 Belgium

4. Centre for Microsystems Technology (CMST) IMEC and Ghent University Technologiepark 126 Ghent 9052 Belgium

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100227

Reference34 articles.

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4. Patent US 9 634 107 B2.

5. N. E.Posthuma S.You S.Stoffels D.Wellekens H.Liang M.Zhao B.De Jaeger K.Geens N.Ronchi S.Decoutere P.Moens A.Banerjee H.Ziad M.Tack in2018 IEEE 30th Int. Symp. Power Semiconductor Devices ICs IEEE2018 pp.284–287 https://doi.org/10.1109/ISPSD.2018.8393658.

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