Characterization of GaAs grown by metalorganic chemical vapor deposition on Si‐on‐insulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98728
Reference11 articles.
1. Molecular beam epitaxy of GaAs and AlGaAs on Si
2. GaAs light‐emitting diodes fabricated on Ge‐coated Si substrates
3. Metalorganic chemical vapor deposition of GaAs on Si for solar cell applications
4. MBE Growth of GaAs on Si: Problems and Progress
5. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
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1. 1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates;Applied Physics Letters;2017-07-17
2. Comparison of GaAs grown on standard Si (511) and compliant SOI (511);Journal of Electronic Materials;2000-07
3. Microstructural Characterization of Epitaxial GaAs on Separation-by-Implanted-Oxygen Substrates;Chinese Physics Letters;1991-10
4. Molecular beam epitaxy of GaAs on Si‐on‐insulator;Applied Physics Letters;1991-07-08
5. High Quality GaAs on Soi by MOCVD;MRS Proceedings;1989
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