1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates
Author:
Affiliation:
1. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA
2. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
AIM Photonics
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara (SSLEEC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4994318
Reference36 articles.
1. Scaling laws and minimum threshold currents for quantum‐confined semiconductor lasers
2. Two-dimensional quantum confinement in multiple quantum wire lasers grown by OMCVD on V-grooved substrates
3. Vertically stacked multiple‐quantum‐wire semiconductor diode lasers
4. Multidimensional quantum well laser and temperature dependence of its threshold current
5. Quantum well lasers--Gain, spectra, dynamics
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