Molecular beam epitaxy of GaAs on Si‐on‐insulator-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of GaAs on Si‐on‐insulator

Published:1991-07-08 Issue:2 Volume:59 Page:210-212
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu Wenhua,Yu Yuehui,Lin Chenglu,Li Aizhen,Zou Shichang,Hemment P. L. F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.105968

Reference11 articles.

1. Epitaxial GaAs on Si: Progress and Potential Applications

2. Characterization of GaAs grown by metalorganic chemical vapor deposition on Si‐on‐insulator

3. GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System

4. Preparation of GaAs Soi and its Laser Recrystallization

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ION BEAM RESEARCH IN CHINA;Laser and Ion Beam Modification of Materials;1994

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