Preparation of GaAs Soi and its Laser Recrystallization

Abstract

ABSTRACTGaAs SOI consisting of a sputtered GaAs film on a SiO2 −Si or sapphire substrate is irradiated by CW Ar+ laser beam with a view to investigating its recrystallization. Using AES, x-ray diffraction, TEM and ED, we have studied the compositions, crystal orientations and grain size of the laser-irradiated GaAs films. The possible application of GaAs SOI to devices is discussed on the basis of the experimental results.