Effects of grain boundaries on laser crystallized poly-Si MOSFET's-Reference-Cited by-同舟云学术

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Effects of grain boundaries on laser crystallized poly-Si MOSFET's

Published:1981-12 Issue:12 Volume:2 Page:316-318
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ng K.K.,Celler G.K.,Povilonis E.I.,Frye R.C.,Leamy H.J.,Sze S.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31846/01481932.pdf?arnumber=1481932

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