Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Published:2002 Issue:1 Volume:91 Page:420
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Yang Jianan,Neudeck Gerold W.,Denton John P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference23 articles.

1. J. P. Colinge,Silicon-On-Insulantor Technology: Materials to VLSI(Kluwer Academic, Boston, MA, 1991).

2. Three dimensional devices fabricated by silicon epitaxial lateral overgrowth

3. Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

4. Degradation characteristics of STI and MESA-isolated thin-film SOI CMOS

5. Isolation process dependence of channel mobility in thin-film SOI devices

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