Isolation process dependence of channel mobility in thin-film SOI devices-Reference-Cited by-同舟云学术

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Isolation process dependence of channel mobility in thin-film SOI devices

Published:1996-06 Issue:6 Volume:17 Page:291-293
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cheng-Liang Huang ,Soleimani H.,Grula G.,Arora N.D.,Antoniadis D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/10859/00496461.pdf?arnumber=496461

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Narrow-Width Effects in 28-nm FD-SOI Transistors Operating at Cryogenic Temperatures;IEEE Journal of the Electron Devices Society;2023

2. Uniaxial Stressed Si MOSFET;Silicon Heterostructure Devices;2007-12-13

3. Uniaxial Stressed Si MOSFET;Silicon Heterostructure Handbook;2005-11

4. Elevated field insulator (ELFIN) process for device isolation of ultrathin SOI MOSFETs with top silicon film less than 20 nm;IEEE Electron Device Letters;2002-08

5. Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs;IEEE Transactions on Electron Devices;2002-06

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