Effects of gate material on Fowler-Nordheim stress induced thin silicon dioxide degradation under negative gate bias
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1766094
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3. Electrical and Reliability Studies of “Wet $ \hbox{N}_{2}\hbox{O}$” Tunnel Oxides Grown on Silicon for Flash Memory Applications;IEEE Transactions on Device and Materials Reliability;2007-09
4. Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕GaN high-electron-mobility transistors on 4in. silicon;Applied Physics Letters;2006-11-06
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