Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕GaN high-electron-mobility transistors on 4in. silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2386919
Reference17 articles.
1. Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier
2. Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate
3. Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off
4. Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN∕GaN high electron mobility transistor characteristics
5. Effects of gate material on Fowler-Nordheim stress induced thin silicon dioxide degradation under negative gate bias
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