Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer-Reference-Cited by-同舟云学术

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Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer

Published:2015-01-20 Issue:2 Volume:8 Page:026502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Wakejima Akio,Ando Akihiro,Watanabe Arata,Inoue Keita,Kubo Toshiharu,Osada Yamato,Kamimura Ryuichiro,Egawa Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/8/i=2/a=026502/pdf

Reference29 articles.

1. Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕GaN high-electron-mobility transistors on 4in. silicon

2. AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

3. High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

4. GaN Power Transistors on Si Substrates for Switching Applications

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier;Microelectronics Reliability;2023-06

2. Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications;Electronics Letters;2021-07-06

3. Role of energy-band offset in photo-electrochemical etching mechanism of p-GaN heterostructures;Journal of Applied Physics;2021-04-28

4. Gated-Anode GaN HEMT Based Diode for Microwave Wireless Power Transfer;2020 IEEE Wireless Power Transfer Conference (WPTC);2020-11-15

5. Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching;Applied Physics Express;2019-12-19

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