Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN∕GaN high electron mobility transistor characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2168036
Reference11 articles.
1. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
2. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate
3. Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
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3. Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates;Japanese Journal of Applied Physics;2015-01-21
4. Sulphide passivation of GaN based Schottky diodes;Current Applied Physics;2014-03
5. Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3deposited by atomic layer deposition using water and ozone as the oxygen precursors;Semiconductor Science and Technology;2014-02-20
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