Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference15 articles.
1. High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
2. InGaN multiple-quantum-well green light-emitting diodes on Si grown by metalorganic chemical vapor deposition
3. Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition
4. Bright, Crack-Free InGaN/GaN Light Emitters on Si(111)
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