Electron trap generation in thermally grown SiO2under Fowler–Nordheim stress
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351334
Reference48 articles.
1. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
2. The Effects of Processing on Hot Electron Trapping in SiO2
3. Electron trapping in SiO2 at 295 and 77 °K
4. Trap creation in silicon dioxide produced by hot electrons
5. Oxide field dependence of SiSiO2 interface state generation and charge trapping during electron injection
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