Copper-induced dielectric breakdown in silicon oxide deposited by plasma-enhanced chemical vapor deposition using trimethoxysilane
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1594812
Reference13 articles.
1. Kinetics of copper drift in low-κ polymer interlevel dielectrics
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4. Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
5. Time‐dependent breakdown of silicon dioxide films
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