Dose calibration for through-oxide doping distributions from time-dependent secondary-ion-mass-spectrometry depth profiles with only one sensitivity factor-Reference-Cited by-同舟云学术

Dose calibration for through-oxide doping distributions from time-dependent secondary-ion-mass-spectrometry depth profiles with only one sensitivity factor

Published:1999-06-28 Issue:26 Volume:74 Page:3969-3971
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wittmaack K.,Lee J. J.,Patel S. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.124239

Reference8 articles.

1. Mechanism of the SIMS matrix effect

2. Depth profiling of As at the SiO2/Si interface using secondary ion mass spectrometry

3. Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect

4. Ion-induced electron emission as a means of studying energy- and angle-dependent compositional changes of solids bombarded with reactive ions

5. An AES-SIMS study of silicon oxidation induced by ion or electron bombardment

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