Depth profiling of As at the SiO2/Si interface using secondary ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97998
Reference6 articles.
1. Profile distortion in SIMS
2. The influence of bombardment conditions upon the sputtering and secondary ion yields of silicon
3. Oxygen-induced segregation effects in sputter depth-profiling
4. Oxygen induced broadening effects studied by RBS and SIMS
5. Temperature dependence of profile tailing and segregation in SIMS analysis of As in Si and SiO2 with oxygen primary ions
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dose calibration for through-oxide doping distributions from time-dependent secondary-ion-mass-spectrometry depth profiles with only one sensitivity factor;Applied Physics Letters;1999-06-28
2. Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect;Surface and Interface Analysis;1998-04
3. SIMS methods in reactivity studies on metal oxides;Inorganica Chimica Acta;1995-07
4. Characterization of sharp interfaces and delta doped layers in semiconductors using secondary ion mass spectrometry;Analytica Chimica Acta;1994-10
5. Determination of arsenic distribution across SiO2/Si interfaces with secondary ion mass spectrometry, using Ar+ bombardment and the internal indicator method;Surface and Interface Analysis;1992-07
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