Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling-Reference-Cited by-同舟云学术

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Application of extra-low impact energy SIMS and data reduction algorithm to USJ profiling

Published:2012-08-05 Issue:1 Volume:45 Page:345-347
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Kouzminov D.¹,Merkulov A.²,Arevalo E.¹,Grossmann H.-J.¹

Affiliation:

1. Varian Semiconductor Equipment Associates; 35 Dory Road; Gloucester; MA 01930; USA

2. CAMECA S.A.; 29 quai des Gresillons; 92622; Cedex; France

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference7 articles.

1. Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect

2. Errors in near-surface and interfacial profiling of boron and arsenic

3. Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile

4. G. Hobler IMSL-2003 TU Vienna Austria 2003

5. Dose calibration for through-oxide doping distributions from time-dependent secondary-ion-mass-spectrometry depth profiles with only one sensitivity factor

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