Indium concentration fluctuations in InGaN/GaN quantum wells
Author:
Affiliation:
1. Łukasiewicz Research Network
2. Institute of Electronic Materials Technology
3. 01-919 Warsaw
4. Poland
5. Institute of High Pressure Physics
6. Polish Academy of Sciences
7. Warsaw
8. TopGaN Ltd.
9. National Centre for Nuclear Research
Abstract
Secondary ion mass spectrometry measurements can provide specific information on In fluctuations in InGaN quantum wells.
Funder
Narodowe Centrum Nauki
Fundacja na rzecz Nauki Polskiej
European Regional Development Fund
Publisher
Royal Society of Chemistry (RSC)
Subject
Spectroscopy,Analytical Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/JA/C9JA00122K
Reference35 articles.
1. White light-emitting diodes: History, progress, and future
2. Comparison between blue lasers and light-emitting diodes for future solid-state lighting
3. Carrier localization in InGaN by composition fluctuations: implication to the “green gap”
4. Indium segregation in InGaN quantum-well structures
5. Indium segregation measured in InGaN quantum well layer
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