Unlocking the origin of compositional fluctuations in InGaN light emitting diodes-Reference-Cited by-同舟云学术

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

Published:2021-02-22 Issue:2 Volume:5 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Mishra Tara P.^ORCID,Syaranamual Govindo J.,Deng Zeyu^ORCID,Chung Jing Yang,Zhang Li,Goodman Sarah A.,Jones Lewys,Bosman Michel,Gradečak Silvija,Pennycook Stephen J.,Canepa Pieremanuele^ORCID

Funder

National Research Foundation Singapore

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.024605/fulltext

Reference82 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Light-emitting diodes for solid-state lighting: searching room for improvements

3. Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well

4. Research challenges to ultra-efficient inorganic solid-state lighting

5. Nitride-based semiconductors for blue and green light-emitting devices

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance improvement of InGaN/GaN light-emitting diodes using parabolic quantum well;Optics Communications;2024-05

2. Ordered phases in ternary wurtzite group-III nitrides: A first-principles study;Journal of Applied Physics;2024-04-08

3. Kinetic Model for Ternary III-Nitride Epitaxy: The Role of Vertical Segregation on Phase Separation;Crystal Growth & Design;2023-10-31

4. Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures;ACS Applied Nano Materials;2023-07-22

5. Redistribution of carrier localization in InGaN-based light-emitting diodes for alleviating efficiency droop;Journal of Luminescence;2022-12