Redistribution of carrier localization in InGaN-based light-emitting diodes for alleviating efficiency droop
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference34 articles.
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2. High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel;Baek;Sci. Rep.,2019
3. Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication;Khoury;Nano Energy,2020
4. Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes;Zhao;Adv. Opt Photon,2018
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1. Flexible Monolithic Bifunctional Device Based on a Lift-off (In,Ga)N Film for Both Lighting and Self-Driven Detection;ACS Omega;2024-02-03
2. Analysis and Tunable Models for Phosphor-Converted White Light-Emitting Diode Based on Spectral Compensation;IEEE Photonics Journal;2023-06
3. Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection;Nanomaterials;2023-01-16
4. Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well;Journal of Applied Physics;2023-01-12
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