SIMS analyses of ultra-low-energy B ion implants in Si: Evaluation of profile shape and dose accuracy
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. Elemental B distributions and clustering in low-energy B+ ion-implanted Si
2. High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS
3. An (un)solvable problem in SIMS: B-interfacial profiling
4. Near-surface secondary-ion-mass-spectrometry analyses of plasma-based B ion implants in Si
5. Dose calibration for through-oxide doping distributions from time-dependent secondary-ion-mass-spectrometry depth profiles with only one sensitivity factor
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