High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS-Reference-Cited by-同舟云学术

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High-resolution depth profiling of ultrashallow boron implants in silicon using high-resolution RBS

Published:2003-02 Issue:1 Volume:3 Page:9-11
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Kimura Kenji,Oota Yukitoshi,Nakajima Kaoru,Büyüklimanli Temel H.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference5 articles.

1. Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis

2. Elemental B distributions and clustering in low-energy B+ ion-implanted Si

3. The Stopping and Range of Ions in Solids;Ziegler,1985

4. Monolayer analysis in Rutherford backscattering spectroscopy

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing boron quantification and depth profiling of different boride materials using ion beams;Surface and Coatings Technology;2021-07

2. Depth Profiling of Boron in Silicon by High-resolution Medium Energy Elastic Recoil Detection Analysis;e-Journal of Surface Science and Nanotechnology;2012

3. Depth profile analysis of helium in silicon with high-resolution elastic recoil detection analysis;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

4. Introduction;Graduate Texts in Physics;2010

5. Defects;Graduate Texts in Physics;2010

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