Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization-Reference-Cited by-同舟云学术

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Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

Published:2022-05-31 Issue:23 Volume:7 Page:19380-19387
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Nagata Takahiro¹²^ORCID,Suemoto Yuya³,Ueoka Yoshihiro³,Mesuda Masami³,Sang Liwen²,Chikyow Toyohiro⁴

Affiliation:

1. National Institute for Materials Science (NIMS), Research Center for Functional Materials (RCFM), Tsukuba, Ibaraki 305-0044, Japan

2. NIMS, International Center for Materials Nanoarchitectonics (WPI-MANA), Tsukuba, Ibaraki 305-0044, Japan

3. Tosoh Corporation, Ayase, Kanagawa 252-1123, Japan

4. NIMS, Research and Services Division of Materials Data and Integrated System (MaDIS), Tsukuba, Ibaraki 305-0044, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c00957

Reference45 articles.

1. Luminescence properties of defects in GaN

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. GaN-Based RF Power Devices and Amplifiers

4. Growth of epitaxial GaN films by pulsed laser deposition

5. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving the rectification characteristics of GaN/Si heterojunction by constructing an interpenetrating two-phase interface layer;Applied Surface Science;2024-03

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