Growth of epitaxial GaN films by pulsed laser deposition-Reference-Cited by-同舟云学术

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Growth of epitaxial GaN films by pulsed laser deposition

Published:1997-07-07 Issue:1 Volume:71 Page:102-104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vispute R. D.,Talyansky V.,Sharma R. P.,Choopun S.,Downes M.,Venkatesan T.,Jones K. A.,Iliadis A. A.,Asif Khan M.,Yang J. W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119441

Reference18 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy

3. Novel metalorganic chemical vapor deposition system for GaN growth

4. High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

5. Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

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4. Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films;physica status solidi (b);2023-03-31

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