Study of Boron Penetration through Gate Oxide Layer by SIMS under Optimized Incident Angle of Low-energy Oxygen Primary Ion Beam-Reference-Cited by-同舟云学术

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Study of Boron Penetration through Gate Oxide Layer by SIMS under Optimized Incident Angle of Low-energy Oxygen Primary Ion Beam

Published:2003 Issue:7 Volume:24 Page:406-410
ISSN:0388-5321
Container-title:Hyomen Kagaku
language:en
Short-container-title:Journal of The Surface Science Society of Japan

Author:

KAWASHIMA Yoshiya¹,KOYAMA Shin¹,ANDO Koichi¹,IDE Takashi¹,AOYAGI Satoka²,KUDO Masahiro²

Affiliation:

1. NEC Electronics Corporation

2. Department of Applied Physics, Seikei University

Publisher

Surface Science Society Japan

Subject

General Earth and Planetary Sciences,General Engineering,General Environmental Science

Link

http://www.jstage.jst.go.jp/article/jsssj/24/7/24_7_406/_pdf

Reference11 articles.

1. The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices

2. A comprehensive study of suppression of boron penetration by amorphous-Si gate in P/sup +/-gate PMOS devices

3. 3) W. Reuter and K. Wittmaack: Appl. Surf. Sci. 5, 221 (1980).

4. 4) H. Frenzel, J.L. Maul, P. Eichinger, E. Frenzel, K. Haberger and H. Ryssel: “Secondary Ion Mass Spectrometry SIMS IV”, ed. by A. Benninghoven, et al. (John Wiley & Sons, New York, 1984) p. 241.

5. 5) 大山秀明,塚本和芳,吉岡芳明:第53回応用物理学会学術講演会予稿集 (1992) p. 521.

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