Depth Profiling of Multilayered Si/Ti by Resonance-enhanced Multiphoton Ionization SNMS
Author:
Affiliation:
1. Advanced Technology Research Laboratories, Nippon Steel Corporation
2. NTT-AT Nanofabrication Corporation
Publisher
Surface Science Society Japan
Subject
General Earth and Planetary Sciences,General Engineering,General Environmental Science
Link
http://www.jstage.jst.go.jp/article/jsssj/31/8/31_8_386/_pdf
Reference13 articles.
1. Diffusion and Segregation Effect in SIMS Depth Profiling using Low-energy Oxygen Primary Ions
2. 3) 丸尾哲也,東 康弘:分析化学 45, 31 (1996).
3. Study of Boron Penetration through Gate Oxide Layer by SIMS under Optimized Incident Angle of Low-energy Oxygen Primary Ion Beam
4. Special Issue on Recent Developments of the Study on Catalytic Reaction Mechanisms. Sputtered Neutral Mass Spectrometry and Its Postionization Techniques.
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Matrix effect-free depth profiling of multilayered Si/Ti with laser-SNMS;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-07
2. Matrix effect-free depth profiling of implanted Mg in Al x Ga1-x As/GaAs multi-layers by resonance enhanced multiphoton laser post-ionization sputtered neutral mass spectrometry;Surface and Interface Analysis;2012-02-24
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