Quantitative analysis of defect states in amorphous InGaZnO thin-film transistors using photoinduced current transient spectroscopy
Author:
Affiliation:
1. Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
2. Department of Display R&D Center, Samsung Display, Yongin 17113, Republic of Korea
Funder
Samsung Display Co., Ltd.,
Basis Science Research Program through the National Research Foundation of Korea
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0050111
Reference35 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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3. Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors
4. Role of Ga2O3–In2O3–ZnO channel composition on the electrical performance of thin-film transistors
5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
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