Insulating gate InGaAs/InP field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100200
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1. Schottky barrier height of n‐InxGa1−xAs diodes
2. A new Ga0.47In0.53As field-effect transistor with a lattice-mismatched GaAs gate for high-speed circuits
3. X-band self-aligned gate enhancement-mode InP MISFET's
4. Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure
5. High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance
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3. Magnetic field control of resonant tunnelling and electric field domain stability in wide quantum well GaAs/AlGaAs superlattices;Semiconductor Science and Technology;2004-02-27
4. Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1995-03-15
5. Optically controlled characteristics of an ion-implanted hetero-MIS capacitor;IEE Proceedings - Optoelectronics;1994-02-01
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