X-band self-aligned gate enhancement-mode InP MISFET's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31879/01483115.pdf?arnumber=1483115
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1. Numerical simulation and modeling of short-channel three-dimensional nano MISFET for the application in ULSI circuits;Physica E: Low-dimensional Systems and Nanostructures;2007-01
2. Ohmic Contacts to II–VI and III–V Compound Semiconductors;Processing of Wide Band Gap Semiconductors;2000
3. Performance of interface engineered SiNx/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's;IEEE Electron Device Letters;1995-12
4. Effects of Sulfide Treatment on InP Metal-Insulator-Semiconductor Devices with Photochemical Vapor DepositP3N5Gate Insulators;Japanese Journal of Applied Physics;1995-10-01
5. Enhancement mode InP MISFET's with sulfide passivation and photo-CVD grown P3N5 gate insulators;IEEE Electron Device Letters;1995-03
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