Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
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Published:1995-03-15
Issue:Part 1, No. 3
Volume:34
Page:1413-1416
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Shei Shih-Chang,Su Yan-Kuin,Yokoyama Meiso
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering