Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure-Reference-Cited by-同舟云学术

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Silicon Oxide enhanced Schottky gate In0.53Ga0.47As FET's with a self-aligned recessed gate structure

Published:1984-12 Issue:12 Volume:5 Page:511-514
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cheng C.L.,Liao A.S.H.,Chang T.Y.,Caridi E.A.,Coldren L.A.,Lalevic B.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31921/01484384.pdf?arnumber=1484384

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photodetectors for Long-Wavelength Lightwave Systems;Optoelectronic Technology and Lightwave Communications Systems;1989

2. Insulating gate InGaAs/InP field‐effect transistors;Applied Physics Letters;1988-12-19

3. High-transconductance heterostructure Ga/sub 0.47/In/sub 0.53/As/InP metal-insulator-semiconductor field-effect transistors grown by chemical beam epitaxy;IEEE Electron Device Letters;1988-03

4. Narrow Bandgap Semiconductor Devices;NATO ASI Series;1987

5. Optical receivers for lightwave communication systems;IEEE Transactions on Electron Devices;1985-12

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