Comment on ’’Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope10B in Si’’

Author:

Vaidyanathan K. V.,Chatterjee Pallab K.,Streetman B. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. SIMS and depth profiling of semiconductor structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03

2. Isotope effects for mega‐electron‐volt boron ions in amorphous silicon;Journal of Applied Physics;1993-05-15

3. Isotope effects for ion-implantation profiles in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04

4. Boron implantation in silicon: Isotope effects studied by secondary ion mass spectrometry;Journal of Applied Physics;1990-07

5. Comparison of range and range straggling of implanted10B and11B in silicon;Applied Physics Letters;1977-04-15

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